Heteroepitaxy has become a subject of keen interest recently because of its applications in optoelectronics. Many material systems such as GaAs-on-Si, GaAs-on-InP, InP-on-Si et al. have been extensively studied.1"3 Although the improvement in material and device qualities continues, the density of threading dislocation in heteroepitaxy is still about a thousand times higher than the value of homoepitaxy. Other alternatives for heteroepitaxy include epitaxial lift-off4 and mass transport wafer fusion.5 However, the former technique has not demonstrated its reliability and the later technique requires a very high temperature and pressure which limits its application. To circumvent these problems for heteroepitaxy, we have explored a different technique, namely bonding by atomic rearrangement (BAR).
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