The concept of the multiple-quantum barrier (MQB)1,2 using electron wave interference was proposed to enhance carrier confinement of DH structure lasers. Recently, we have demonstrated the MQB effect by preliminary photo-luminescence experiments.3 Kishino et al.4 reported a drastic improvement of the GaInP/AlInP lasers by introducing the MQB. We have also shown that the increased effective potential barrier by the MQB is more than 100 meV even in the 630 nm range AlGaInP lasers.5 However, in the previously reported MQB structure, there was a limitation in the effective potential barrier height, when we increased the Al composition in the active layer. Therefore, it is difficult to obtain a sufficient barrier height for 600 nm range lasers even by using the MQB. In this paper, we propose a modified MQB structure and show that the actual potential barrier height under biased conditions is increased to be more than 200 meV for 600 nm band visible lasers.

© 1991 Optical Society of America

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