Abstract

Injection-locking of diode laser arrays is an efficient technique to force the emission of these high-power devices into a single diffraction-limited lobe.1 An intuitive explanation for single-lobed emission is that the injection-locking causes all the emitters of the array to emit with the same frequency and phase. Several experimental peculiarities, such as the offset emission angle of the locked lobe, the unexpected large locking bandwidth, or the steering of the lobe with master/slave detuning, cannot be explained using this simple approach.2-4 We propose a new and accurate model for injection in gain guided arrays.

© 1991 Optical Society of America

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