Abstract

Bonding stress is of concern to manufacturers of laser-emitting diodes and laser diodes because device degradation has been correlated with mechanical stress.1–3 We have measured stresses induced by bonding AlGaAs superluminescent diodes (SLDs) to heatsinks by observing the degree of polarization p = (LTE − LTM)/ (LTE + LTM) of the facet emission at low current,4 where LTE and LTM are the emitted intensities in the TE and TM polarizations, respectively.

© 1991 Optical Society of America

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