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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CWD5

Band-edge resonant photorefractive effect in bulk semiconductors and multiple quantum wells

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Abstract

Despite their great potential, realization of semiconductor photorefractive devices has been hindered by small nonlinearities (e.g., two-beam-coupling gain coefficient and diffraction efficiency), a result of the small Pockels electro-optic coefficients of semiconductors. To enhance the nonlinearities, methods to increase the space-charge electric field (such as application of an ac or dc electric field, the moving grating technique, or a temperature-dependent resonance) have been used.

© 1991 Optical Society of America

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