Abstract

Much attention has recently been given to IR detectors and detector arrays based on intersubband transitions1 and bound-to-excited-state transitions (BEST) in doped GaAs/AIGaAs quantum wells (QW)2 These QW IR detectors are expected to combine both the detectivity of HgxCd1−xTe and the pixel uniformity of PtSi, along with the potential to pursue further integration with III–V electronics.

© 1991 Optical Society of America

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