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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CWB3

Integrated rib-waveguide Si/SiGe photodetector for long wavelengths

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Abstract

The use of silicon-germanium heterostructures permits the realization of Si-based optoelectronic detectors in the 1-3 μm wavelength regime.1,2 in addition, silicon-on-insulator (SOI) structures are useful for Si-based integrated optoelectronics because the buried oxide layer forms a low-index waveguiding region, thus permitting the engineering of integrated optoelectronic device structures.

© 1991 Optical Society of America

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