Abstract
Conventional electro-optic (EO) sampling gains sensitivity by modulating the signal at devices under test (DUTs).1 Such modulation may, however, cause unwanted operation, especially in digital integrated circuits (ICs). To avoid this result, we devised a new scheme to modulate the probe beam and applied this technique to ultrafast GaAs ICs. Because this technique is also applicable to the slow change of field distribution, we studied the substrate bias effectin semi-insulating GaAs substrate under side- gate configuration.
© 1991 Optical Society of America
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