Abstract

Femtosecond excitation of electron-hole pairs within the surface depletion layer of GaAs gives rise to ultrafast longitudinal field changes induced by carrier separation and screening effects. These longitudinal fields deform the optical indicatrix on (100)-oriented material through the electro-optic effect. Thus with ultrafast reflective electro-optic sampling (REOS), the dynamics of the field transients can be monitored in fs pump probe experiments.

© 1991 Optical Society of America

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