The predicted very high speed and very low threshold1,2 capability of strained-layer (SL) lasers have been generating a great deal of interest in the study of the dynamics of these lasers. The demonstrated modulation bandwidth of strained-layer, InGaAs/GaAs single quantum- well (SQW) lasers are, however, only 6-7 GHz.3,4 The key to the high-speed operation of the strained-layer quantum-well lasers is to keep the carrier density low enough so that the differential gain of the device could be maintained high.5 A modulation bandwidth of greater than 10 GHz was realized in a multiple quantum well (MQW) InGaAs, stripe-laser structure.6

© 1991 Optical Society of America

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