Low-temperature (LT) grown GaAs material has recently been shown to have interesting properties, such as semi-insulating electrical characteristics,1 subpicosecond photoconductive decay time, and reasonably high mobility, making possible the generation of subpicosecond electrical pulses.2-4 We have grown GaAs-AlGaAs quantum-well structures with the quantum-well growth stage at low temperature, and we find that the quantum wells are semi-insulating and still exhibit enough excitonic resonance that we can observe parallel-field excitonic electroabsorption.

© 1991 Optical Society of America

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