Abstract

Low-temperature (LT) grown GaAs material has recently been shown to have interesting properties, such as semi-insulating electrical characteristics,1 subpicosecond photoconductive decay time, and reasonably high mobility, making possible the generation of subpicosecond electrical pulses.2-4 We have grown GaAs-AlGaAs quantum-well structures with the quantum-well growth stage at low temperature, and we find that the quantum wells are semi-insulating and still exhibit enough excitonic resonance that we can observe parallel-field excitonic electroabsorption.

© 1991 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription