Abstract

When GaAs is grown by MBE at low temperature (i.e., in the vicinity of 200°C) and subsequently annealed at about 600°C, the carrier lifetime as determined by photoconductivity and photoreflectance is dramatically reduced,1 an effect generally attributed to the excess arsenic that is incorporated into the material under low-temperature (LT) growth conditions.2,3 We have performed transient absorption spectroscopy of the band–edge region of LT GaAs to determine directly the carrier dynamics.

© 1991 Optical Society of America

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