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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuG3

Single-picosecond high-voltage photoconductive switching using low-temperature-grown GaAs

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Abstract

Numerous low voltage, photoconductive switching experiments have been performed on the single-picosecond tune scale. Conversely, kilovolt photoconductive switching has been demonstrated, but with switching times no less than tens of picoseconds. The difficulty in achieving both high speed and high voltage arises from the electric field hold-off limitation of 104 V/cm inherent in traditional photoconductive materials. To switch a single picosecond pulse requires that the gap dimension be no greater than 100 μm, which limits the switched signal to tens of volts.

© 1991 Optical Society of America

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