Abstract

Strain-induced effects have been expected to improve laser diode characteristics. In this paper, we report both compressive and tensile strain effects on the performance of AlGaInP/GaInP visible lasers, which have attracted much attention as light sources in optical information processing systems. An extremely low threshold current density was obtained for a compressive strained device, and TM mode lasing was observed for a tensile strained device.

© 1991 Optical Society of America

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