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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuA6

InGaAs-GaAs strained layer multiple quantum well lasers fabricated by chemically assisted ion beam etching

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Abstract

By reducing the optical cavity length (L < 100 μm) and thus the photon lifetime in quantum well lasers, a high modulation bandwidth can be achieved. In addition, the increased differential gain in strained-layer lasers has been predicted theoretically1 and shown experimentally2 to make them faster than conventional GaAs quantum well lasers. For short cavity lasers, multiple quantum wells (MQWs) are necessary to provide higher differential gain to obtain lower threshold current and wider bandwidth. MBE structures were grown with six strained-layer In0.3Ga0.7As quantum wells with GaAs barriers for the active region. These layers are sandwiched between 0.25 μm linearly graded-index (AlxGa1−xAs) and 0.45 μm Al0.7Ga0.3As cladding layers.

© 1991 Optical Society of America

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