Abstract

The promise of lower threshold current, higher efficiency semiconductor diode lasers in the wavelength regime 0.9 ≤ λ ≤ 1.1 μm using the strained InGaAs/AlGaAs materials system has recently stimulated much interest. To date, however, the strained material grown by Molecular Beam Epitaxy (MBE) has not reached even the low threshold currents achieved in the unstrained GaAs/AlGaAs system.

© 1991 Optical Society of America

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