Excimer Laser Metal Deposition for Filling of High Aspect Ratio Vias and Trenches

Bodil Braren; Alvin Sugerman; Alvin Sugerman; Frank Turene; Frank Turene

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1991),
paper CPD35

Excimer Laser Metal Deposition for Filling of High Aspect Ratio Vias and Trenches

Bodil Braren, Alvin Sugerman, and Frank Turene

Conference on Lasers and Electro-Optics 1991

Baltimore, Maryland United States
12–17 May 1991
ISBN: 1-55752-189-1

From the session
Postdeadline (CPD)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
B. Braren, A. Sugerman, and F. Turene, "Excimer Laser Metal Deposition for Filling of High Aspect Ratio Vias and Trenches," in Conference on Lasers and Electro-Optics, J. Bufton, A. Glass, T. Hsu, and W. Krupke, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1991), paper CPD35.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

A critical problem in semiconductor multilevel metallization is the filling of high aspect ratio vias and trenches. Well-established techniques (such as evaporation, sputtering and chemical vapor deposition) present their own problems and are inadequate when they are extended to the requirements of today's technological needs.

PDF Article

More Like This

Excimer laser deposition of metal dichalcogenide compounds

V. J. Dyhouse, P. T. Murray, P. J. John, M. S. Donley, J. S. Zabinski, and N. T. MeDevitt
CThQ5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991

Damage threshold study of magnetron-sputter deposited multilayer mirrors for quasi-cw high-power excimer lasers

Katsuhiko Mutoh, Takashi Iwabuchi, Yuka Yamada, and Takeo Miyata
CThR26 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991

Liquid encapsulated laser chemical vapor deposition of A1

H. W. Lee and S. D. Allen
CFL1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991

Previous Article Next Article