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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CPD10

1.2 ps High-Sensitivity Photodetector/Switch Based on Low-Temperature-Grown GaAs

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Abstract

Low-temperature-grown GaAs (LT GaAs) buffer layers have recently been used for application in ultrafast and high-power optical switching. Its subpicosecond response, high mobility, and inordinately high breakdown voltage make this material ideal for electrical pulse generation and gating.[1] The applications so far have been limited to those requiring moderate-to-high peak optical powers since the switching efficiency is still less than 1%. This relatively low value, however, is not so much a problem with the photoconductive material as with the electrode geometry.

© 1991 Optical Society of America

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