Abstract
Low-temperature-grown GaAs (LT GaAs) buffer layers have recently been used for application in ultrafast and high-power optical switching. Its subpicosecond response, high mobility, and inordinately high breakdown voltage make this material ideal for electrical pulse generation and gating.[1] The applications so far have been limited to those requiring moderate-to-high peak optical powers since the switching efficiency is still less than 1%. This relatively low value, however, is not so much a problem with the photoconductive material as with the electrode geometry.
© 1991 Optical Society of America
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