We have recently grown Ga0.47In0.53As/Al0.48 In0.52As and Ga0.376Al0.094In0.094In0.53As/Al0.48In0.52as multiple-quantum-well (MQW) structures, lattice-matched to InP substrates, using a Riber 32P molecular beam epitaxy (MBE) machine.1 This material system has become one of the best candidates for optoelectronic and all-optical devices in the 1,3- to 1.5-µm range. The ternary exciton peak wavelengths can be adjusted by changing quantum-well thickness utilizing the quantum-confinement effect. In the quaternary systems, both well thickness and Ga/Al ratio shift the energy band gap, allowing one to tailor other parameters such as carrier lifetime or exciton-peak sharpness while maintaining the band edge at the same wavelength.

© 1991 Optical Society of America

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