Efficient reflectance modulators have been demonstrated using electrically controlled, asymmetric Fabry-Perot (ASFP) resonators;1 however, until now these have only been realized in the AlGaAs/GaAs materal system and have been limited to operation near 870 nm. The necessity of lattice-matched epitaxial growth limits the wavelengths available for optoelectronic devices using thick-layered Bragg-reflector stacks. A fundamentally new approach is needed to extend operation of these important devices to longer wavelengths.

© 1991 Optical Society of America

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