Abstract

Impressive performance has been demonstrated recently in diode-pumped Nd3+ lasers; however, a number of problems, such as narrow absorption bandwidth, thermal loading, and limited energy storage, make it difficult for these lasers to achieve higher powers and efficiencies. InGaAs diode-pumped Yb3+ lasers offer a number of advantages over Nd3+ lasers, including large absorption bandwidth in some hosts, lower heating per unit pump power, and longer upper-state lifetime. Here we report on an InGaAs diode-pumped Yb:YAG laser that we believe to be the first room-temperature Yb3+ laser in a bulk material.

© 1991 Optical Society of America

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