It is important to control the electroabsorption saturation intensity in multiple quantum-well (MQW) devices used for modulation1,2 and optical logic.3,4 Although phase-space filling is believed to be the dominant mechanism of absorption saturation in the absence of a field in MQWs, Cavicchi et al.5 demonstrated that large photogenerated hole populations could screen fields applied to MQWs. This effect is the dominant cause of electroabsorption saturation in GaInAs/InP MQWs at room temperature.6

© 1991 Optical Society of America

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