Abstract

Intracavity loss modulated lasers are attractive optical sources for high bit rate digital optical interconnects.1 This method of modulating the laser output also reduces spectral broadening accompanying laser switching.2 The performance of these devices is ultimately determined by optical absorption in the loss section and the dependence of the absorption on intensity, voltage, and temperature. We have investigated the intensity, voltage, and temperature dependence of optical absorption in InGaAs/InP multiple quantum wells. We relate these results to the observed lasing characteristics of intracavity loss modulated InGaAs/InP lasers.

© 1991 Optical Society of America

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