Abstract

Laser modification of semiconductor surfaces, particularly annealing of ion-implanted layers and doping, has been considered during the last few years and has shown promise in the direction of modern microelectronics and optoelectronics technology. However, physics of laser produced modification and the potential and limitations of laser methods for fabrication electronic structures, especially of small (micron/submicron) sizes, have not been sufficiently studied.

© 1991 Optical Society of America

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