Surface alterations of SiO2 by 9.8 eV photons from an Argon excimer laser

Kou Kurosawa; Masahito Katto; Masahiro Okuda; Wataru Sasaki; Wataru Sasaki; Wataru Sasaki; Yasuo Takigawa; Yasuo Takigawa; Etsuo Fujiwara; Etsuo Fujiwara; Kunio Yoshida; Kunio Yoshida; Yoshiaki Kato; Yoshiaki Kato; Yoshihide Inoue; Yoshihide Inoue

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1991),
paper CFL4

Surface alterations of SiO₂ by 9.8 eV photons from an Argon excimer laser

Kou Kurosawa, Masahito Katto, Masahiro Okuda, Wataru Sasaki, Yasuo Takigawa, Etsuo Fujiwara, Kunio Yoshida, Yoshiaki Kato, and Yoshihide Inoue

Conference on Lasers and Electro-Optics 1991

Baltimore, Maryland United States
12–17 May 1991
ISBN: 1-55752-189-1

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Laser Applications in Microelectronics (CFL)

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K. Kurosawa, M. Katto, M. Okuda, W. Sasaki, Y. Takigawa, E. Fujiwara, K. Yoshida, Y. Kato, and Y. Inoue, "Surface alterations of SiO2 by 9.8 eV photons from an Argon excimer laser," in Conference on Lasers and Electro-Optics, J. Bufton, A. Glass, T. Hsu, and W. Krupke, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1991), paper CFL4.

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Abstract

Vacuum ultraviolet (VUV) lasers provide fascinating tools for material processing since the photons have energy enough to break almost all chemical bonds. We have been developing VUV lasers with purposes of wide applications to material processing and photochemistry as well as spectroscopy. Among them, argon and krypton excimer lasers generate intense light as high as 100 MW/cm² within 5 ns duration at 126 nm (photon energy of 9.8 eV), and 146 nm (8.5 eV), respectively. We have tried to apply them to surface processing of SiO₂ which is a very important and further interesting material in electronics and optics.

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