Abstract

Laser chemical vapor deposition (LCVD) has been actively investigated as a method for direct, high speed patterning of thin film electronic materials such as metals, semiconductors, and insulators.1 The requirement of high vapor pressure reactants in order to achieve the necessary high deposition rates and right speeds can severely restrict the choice of LCVD systems, particularly for such highly conductive materials as Al, Au, and Cu. Al provides an interesting case as a high vapor pressure precursor, trimethylaluminum (TMA), exists but does not decompose cleanly on heating and LCVD deposits normally contain significant amounts of carbon. Triisobutylaluminum (TIBA),2 on the other hand, decomposes cleanly to Al, but has a low vapor pressure.

© 1991 Optical Society of America

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