InGaAsP/InP semiconductor lasers emitting near 1.3 μm are desirable tor high capacity optical communication system due to the low dispersion in silica optical fibers. Lasers with high Output power and high linearity are also essential for analog modulated light sources for CATV systems. Strained InGaAs(P)/InP MQW lasers are considered to be potential candidates tor such light sources because biaxial strain could modify the QW electronics band structure such that it may both enhance the differential gain1 and suppress the non-radiative loss mechanisms.1-3 High quality lasers with strained InGaAs quantum wells, emitting near 1.48 to 1.55 μm, have been realized only recently.4-6: Here we report what we believe to be the first MQW lasers with improved performances obtained by using strained InGaAsP as the wells.

© 1991 Optical Society of America

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