The development of high power semiconductor Users has led to renewed interest in resonant pumping of solid state lasers based on rare earth active ions. Most of this research has been confined to the use of GaAs/AlGaAs semiconductor laser devices which perform at high power within the 0.75-0.87-μm range. These diode lasers have been used to pump Nd3+ at 0.81 μm, Tm3+ at 0.79 μm, and E3+ at 0.80 μm. Recently, however, high power performance has been obtained from InGaAs/AlGaAs strained quantum well lasers,1 which operate in the 0.93-1.10-μm range. An InGaAs/ AlGaAs laser has been used to pump at 0.98 μm a 1.53-μm Er3+ doped fiber amplifier.2

© 1990 Optical Society of America

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