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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CWL4

XeCl excimer laser ablation of poly(ether sulfone)

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Abstract

Polymer surface reactions by laser ablation are important for various industrial uses.1 Recently, we reported that a highly periodic microstructure appeared on the ablated surface of poly(ethersulfone) (PES) on the irradiation of a XeCl excimer laser (308 nm) with a nonpolarized single laser beam.2 This microstructure differs essentially from that observed previously on other polymers such as polyimide and poly-(ethylene-terephthalate). Its morphology can be easily controlled by varying the radiative conditions of fluence and incident angle; it was modified gradually from a random pattern to a grating as the incident angle of the beam was changed from 0 to 45° (Fig. 1). Interestingly, the micropattern disappeared on the ablated bottom at a high pulse rate (>15 Hz) or at a low fluence (<500 mJ • cm−2).

© 1990 Optical Society of America

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