Abstract

Laser-induced chemical vapor deposition (LCVD) has been successfully demonstrated as a new approach for low temperature selective epitaxy of III-V semiconductors. GaAs substrates thermally biased to temperatures in the range of 250–500°C have been irradiated by an Ar-ion laser to induce localized deposition of GaAs. Carefully selecting the deposition parameters results in selective growth controlled to the monolayer level. Spot sizes in the 30-1000 μm range were achieved. The deposited films have both optical and electronic properties comparable with that of MOCVD films grown in the same reactor. Doping of the LCVD films has been achieved using DMZn and H2SE, and carrier concentrations in the 1017-1019 range were achieved. The LCVD growth rates as a function of deposition temperature are reported for different laser powers and seem to follow an Arrhenius type relation. Activation energies in the 10-13-kcal/mole range have been estimated for growth temperatures in the 250–400°C range. Different models describing the LCVD processes are presented.

© 1990 Optical Society of America

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