Abstract
Laser-induced degradation of band gap photoluminescence (PL) efficiency in GaAs exposed to above gap excitation has been reported previously, but the physical mechanisms responsible for the decrease remain unclear.1-3 Here we report the detection of solid arsenic by Raman scattering with approximately one monolayer sensitivity during PL degradation. By monitoring in situ the carrier Tc and lattice TL temperatures from the PL spectrum and the Stokes to anti-Stokes ratio, respectively, we demonstrate that As formation is not caused by thermal effects. Laser-enhanced oxidation is also ruled out. Our results suggest that the same mechanism is responsible for PL degradation and As formation. They are consistent with nonradiative recombination breaking As bonds followed by migration of As to the surface and eventual incorporation in a cluster.
© 1990 Optical Society of America
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