Abstract
Dry etching of the thermal dioxide silicon films without rf plasma etching is needed. If the photoprocess is used in this method, the minute circuit patterns can be fabricated without plasma damage. Methods of selective photoetching of SiO2 by means of CF2 or CF3 radicals excited by ArF or KrF excimer lasers have been reported,1 also by using an ArF laser in a NF3 and H2 gas atmosphere.2
© 1990 Optical Society of America
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