Abstract

We have recently shown that by operating near the band-edge in photorefractive semiconductors, very large beam coupling gain coefficients (Γ = 16.3 cm−1) can be achieved at wavelength regions with moderate absorption coefficients (α < 3 cm−1).1 The largest net gain we have observed (Γα = 13.3 cm−1) resulted in more than a factor of 200 amplification of a weak signal beam in our 4-mm long crystal.

© 1990 Optical Society of America

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