To develop fast nonlinear devices using saturable excitonic absorption in multiple quantum wells (MQWs) it is crucial to be able to reduce absorption recovery time. The absorption saturation is caused by screening by free carriers so the recovery time is determined by the carrier lifetime, which is in the region of 30 ns. In GaAs/ GaAlAs MQWs proton bombardment has reduced the recovery time to 150 ps,1 but further reduction is not possible without adversely affecting the optical properties.

© 1990 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription