Abstract
Strain-induced waveguides were fabricated by depositing a thin layer of silicon nitride (some 2000 Å) on an GaAs/AlGaAs MQW layer and selectively etching it off using photolithography and plasma enhanced vapor phase etching to leave stripes of SiNx ranging from 4 to 10 μm wide on the surface of the MQW layer. A schematic drawing of the waveguide cross section is shown in Fig. 1.
© 1990 Optical Society of America
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