Abstract

Recent advances in both epitaxial growth and processing techniques have led to the fabrication and characterization of semiconductor quantum wires.1–3 The inherent density of states function in an ideal quantum wire has been shown4 to result in an infinite absorption peak at each quantum transition edge. Using the effective mass approximation, the idealized interband absorption in a 100- × 100-Å GaAs quantum wire is shown in Fig. 1, in which the absorption spectrum in bulk GaAs is also shown for comparison.

© 1990 Optical Society of America

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