Abstract

Si-TaSi2 semiconductor-metal eutectic materials contain arrays of parallel TaSi2 rods embedded in a single crystal Si matrix. This structure is formed during crystal growth from a melt. The rods, which are ~1 µm in diameter and average ~8 µm apart, from Schottky junctions with the Si. A diode can be made using a metal contact pad (in this case CoSi2) which provides a metallic contact to a group of TaSi2 rods but maintains a Schottky barrier to the Si matrix parallel to those of the rods.1

© 1990 Optical Society of America

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