Abstract
Semiconductor optical amplifiers fabricated based on the InGaAsP material system are of interest for use in lightwave transmission systems. For practical use, it requires that the semiconductor laser amplifier have high optical gain, small gain ripple with respect to wavelength, good far field for small fiber coupling loss, and polarization-independent gain. We have fabricated buried facet optical amplifiers which exhibit >25-dB gain, <1-dB gain ripple, <1-dB gain difference between TE and TM polarized lights, and 4-6-dB fiber-to-chip coupling loss.
© 1990 Optical Society of America
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