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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CPD16

InGaAs/InAlAs Quantum Well Electron Transfer Intersecting Waveguide Switch Operating at 1.55 μm

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Abstract

There is great demand in photonic switching systems for high-speed, low-voltage semiconductor waveguide switches. For formation of switch arrays and monolithic integration with other semiconductor devices, compact individual crosspoints are essential. Switches with very small active length can be made in the intersecting waveguide (X-switch) geometry when operated with a sufficiently large refractive index change, for example that produced by current-injection bandfilling [1]. However, in current-injection switches modulation bandwidth is limited to only ~50 MHz by carrier recombination dynamics.

© 1990 Optical Society of America

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