Single quantum well laser diodes (SQW LDs) with graded index separate confinement heterostructure (GRIN-SCH)1 have been demonstrated to exhibit excellent characteristics, such as low threshold current density, low internal loss, and high quantum efficiency in the GaAlAs/GaAs system. On the other hand, in long wavelength quantum well LDs, SQW LDs show a much higher threshold current than MQW LDs mainly due to the nonradiative Auger recombination effect. There is a report2 of a SQW LD in the GaInAs(P)/InP system; however, the lasing characteristics under cw operation of the SQW LD have not been described in detail.

© 1990 Optical Society of America

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