Abstract

Recent milestones in strained-layer technology have encouraged accelerated activity in connection with several major applications. Modern epitaxy, to which the InGaAs pseudomorphic lasers owe their existence, has advanced to the point where it is now clear that these long wavelength devices can rival or surpass their GaAs counterparts in performance and reliability. In the last year alone we have seen that strain accommodation works, that performance degradation need not accompany the shift to low band gap, and that pseudomorphic laser devices are more reliable than many thought possible. All this puts such lasers in strong contention for (rare earth glass) pump source as well as direct beam applications.

© 1990 Optical Society of America

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