Abstract

Much attention has recently been focused on the design and fabrication of surface emitting lasers (SELs)1–4 in an effort to reap the inherent advantages associated with these structures over edge emitting lasers. For practical applications, the frequency response of these devices is very important. Calculations are based on the general structure shown in Fig. 1, which is applicable to all GaAs or InP based SELs and in this case applied to a 1.3-μm GaInAsP SEL.

© 1990 Optical Society of America

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