Abstract

Vertical cavity surface emitting lasers (SELs)1 are key elements in a variety of optical interconnection schemes. For these applications the massive integration of high performance SEL is required. The most significant parameters are low threshold currents, efficient heat dissipation, and low resistance. In addition, for reliability of processing and robustness, it is desirable to preserve wafer planarity. This set of requirements motivated us to explore the use of ion implantation for laser definition. We report here on the fabrication of vertical cavity SEL using tailored ion implantation techniques.

© 1990 Optical Society of America

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