Waveguides made from the quaternary compound InGaAlAs are interesting in that the band gap can be tuned over the 0.85- 1.6-μm communications wavelength range by varying the composition. The possibilities of monolithic integration of these waveguides with active devices and detectors make these materials extremely attractive for both optoelectronic and all-optical switching applications. We are interested in semiconductor materials operated at wavelengths near 1.55 μm, since this corresponds to the minimum loss window in optical fibers. Two-photon absorption is an important consideration because it represents a significant limitation to all-optical switching and is potentially useful in optical limiting applications.1

© 1990 Optical Society of America

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