Abstract

Picosecond dynamic properties of a gain switched laser with double heterostructure GaAl As/GaAs were investigated. The peak power and pulse width dependence on diode structure for a laser diode were analyzed. The variation of temporal profiles under different bias current and different electric driving pulses was tested. Also the optical width dependence on temperature was investigated. When a set of optimum parameters for LD operation was selected, a peak power of 800 mW with a pulse width of 22 ps at a repetition rate of 100 MHz was obtained. The optical pulse was measured by a Syncroscan streak camera with high sensitivity and temporal resolution of 2 ps.

© 1989 Optical Society of America

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