Abstract

Fanning is a phenomenon where the randomly scattered light from a beam incident on a photorefractive crystal is amplified via two-wave mixing at the expense of the incident beam. The angular intensity distribution of the scattered light in fanning is asymmetrical about the incident beam, because the beam energy transfer in two-wave mixing is a crystal-orientation-dependent unidirectional process. Observation of the fanning effect has been only reported for those photorefractive crystals with a large electrooptic coefficient such as BaTiO3. This paper reports, we believe for the first time, the observation of a fanning phenomenon in GaAs under a dc electric field, although GaAs has a much smaller electrooptic coefficient than BaTiO3. This observation is anticipated, because an applied electric field can substantially enhance two-wave mixing gain in GaAs and other compound semiconductors.1-5

© 1989 Optical Society of America

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