A laser diode (LD) life test was performed to demonstrate that laser diodes suitable for pumping a NdtYAG laser could have tong usable lifetimes. The tested devices were double heterostructure (DH) GaAIAs laser diodes grown by metal-organic chemical vapor deposition (MOCVD) with 60-p.m wide oxide defined stripes. The aluminum concentration in the active region was adjusted to produce IDs which operate in the 808-nm wavelength region at a heat sink temperature of —20°C. The p-side metallization utilized a four-layer metal design consisting of chromium, titanium, platinum, and gold (Cr/Ti/Pt/Au). The n-side metallization consisted of a gold germanium ohmic contact topped with a thick gold layer. The LDs had high reflectivity (~90%) coating on the back facet and an aluminum oxide half-wavelength passivation coating on the front facet. The diodes were bonded p-side down with indium solder to a BeO heat sink.

© 1989 Optical Society of America

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