Abstract

The use of strained layer InGaAs quantum well heterostructure active regions in AIGaAs/GaAs laser structures1–3 is of interest for applications requiring an emission wavelength in the 0.9–1.1m range. Most previous reports have been limited to λ < 1 μm. We describe strained layer InGaAs quantum well heterostructure lasers grown by metalorganic chemical vapor deposition (MOCVD) operating to λ ~ 1.1 μm and application of these structures to buried heterostructure lasers and high power phase-locked layer arrays.

© 1989 Optical Society of America

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