The use of strained layer InGaAs quantum well heterostructure active regions in AIGaAs/GaAs laser structures1–3 is of interest for applications requiring an emission wavelength in the 0.9–1.1m range. Most previous reports have been limited to λ < 1 μm. We describe strained layer InGaAs quantum well heterostructure lasers grown by metalorganic chemical vapor deposition (MOCVD) operating to λ ~ 1.1 μm and application of these structures to buried heterostructure lasers and high power phase-locked layer arrays.

© 1989 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription