Quantum well (QW) lasers are finding increased use in high power surface emitting laser applications. To maximize power surface density and optical fill factors, the optimization of these devices leads to multiple quantum well (MQW) lasers and to an enhanced importance of differential efficiency ηd. Single quantum wells (SQWs) have an ηd which is nearly constant (it decreases very slowly) at long laser lengths L; however, at short L and elevated temperatures, ηd decreases rapidly,1,2 thus limiting SQW suitability to long lasers and low power densities.

© 1989 Optical Society of America

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