Distributed feedback (DFB) lasers with a semi-insulating (SI) current blocking layer1,2 are expected to have excellent modulation characteristics, since SI layers with high resistivity offer low parasitic capacitance. Furthermore, SI layers have the potential for achieving integrated circuits. We have obtained highly resistive SI layers (5 × 108 Ω cm) by doping with Fe using low pressure metal-organic vapor phase epitaxy (MOVPE).

© 1989 Optical Society of America

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